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PD - 96978A
IRF6611
DirectFETTM Power MOSFET
Typical values (unless otherwise specified)
Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max 20V max 2.0m@ 10V 2.6m@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for High Frequency Switching above 1MHz Ideal for CPU Core DC-DC Converters 37nC 12nC 3.3nC 16nC 23nC 1.7V Optimized for SyncFET Socket of Sync. Buck Converter Low Conduction Losses Compatible with Existing Surface Mount Techniques
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
DirectFETTM ISOMETRIC
Description
The IRF6611 combines the latest HEXFET(R) power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including RDS(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low RDS(on) and high Cdv/ dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical RDS(on) (m)
Max.
30 20 27 22 150 220 210 22
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 ID= 22A
A
mJ A
ID = 27A 15 10 5 0 0 1 T J = 25C 2 3 4 5 6 7 8 9 10 T J = 125C
VDS= 24V VDS= 15V
20
30
40
50
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs Repetitive rating; pulse width limited by max. junction temperature.
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage Starting TJ = 25C, L = 0.91mH, RG = 25, IAS = 22A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
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1
04/18/05
IRF6611
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 100 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 23 2.0 2.6 --- -6.7 --- --- --- --- --- 37 9.8 3.3 12.5 11.4 15.8 23
---
Conditions
VGS = 0V, ID = 250A
--- --- 2.6 3.4 2.25 --- 1.0 150 100 -100 --- 56 --- --- --- --- --- 2.3 --- --- --- --- --- --- ---
V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 27A VGS = 4.5V, ID = 22A V mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 22A VDS = 15V nC VGS = 4.5V ID = 22A See Fig. 17 nC
VDS = VGS, ID = 250A
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 22A
--- --- --- --- --- --- ---
18 57 24 6.5 4860 1030 480
ns
Clamped Inductive Load VGS = 0V
pF
VDS = 15V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 24 16 1.0 36 24 V ns nC --- --- 220
Min.
---
Typ. Max. Units
--- 3.5 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6611
Absolute Maximum Ratings
Parameter
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
Parameter
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
W/C
100
Thermal Response ( Z thJA )
10
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3 C 3
0.1
Ri (C/W) i (sec) 2.575 0.000686 22.547 19.884 0.786140 28
1
2
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with a thin gap filler and heat sink. (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6611
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.5V 10
10
2.5V 1 0.1 1
60s PULSE WIDTH
Tj = 25C 10
1
60s PULSE WIDTH
Tj = 150C 0.1 1 10
100
1000
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 25C 10 T J = -40C
Fig 5. Typical Output Characteristics
1.5 ID = 27A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
T J = 150C
1.0
1
V GS = 10V V GS = 4.5V 0.5
0.1 1 2 3 4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
10
Typical RDS(on) Normalized ( m)
8
C, Capacitance(pF)
10000 Ciss
6
Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
1000
Coss Crss
4
2 T J = 25C 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A)
100 1 10 VDS, Drain-to-Source Voltage (V) 100
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Normalized Typical On-Resistance vs. Drain Current and Gate Voltage
4
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IRF6611
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
100sec 1msec 10msec
1
T J = 150C T J = 25C T J = 40C
1 Ta = 25C Tj = 150C Single Pulse 0.1 0 0 1 10 100
VGS = 0V 2.5 3.0 3.5
0 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
160
Limited by package
Fig11. Maximum Safe Operating Area
2.0
VDS, Drain-to-Source Voltage (V)
VGS(th) Gate threshold Voltage (V)
140 120
ID, Drain Current (A)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID = 50A
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
800 700 600 500 400 300 200 100 0 25 50 75
ID
TOP
8.7A 11A BOTTOM 22A
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6611
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6611
D.U.T
Driver Gate Drive
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
Reverse Recovery Current
P.W.
Period
D=
P.W. Period VGS=10V
*
+
D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * *
di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6611
DirectFETTM Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M N P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.59 0.03 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.70 0.08 0.17 IMPERIAL MAX MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.032 0.033 0.015 0.017 0.035 0.039 0.090 0.095 0.023 0.028 0.001 0.003 0.003 0.007
DirectFETTM Part Marking
8
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IRF6611
DirectFETTM Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6611). For 1000 parts on 7" reel, order IRF6611TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MAX MIN MIN MAX MAX 12.992 N.C 6.9 A N.C 177.77 N.C 330.0 N.C 0.795 0.75 N.C B N.C 19.06 20.2 N.C N.C 0.504 0.53 C 0.50 13.5 12.8 0.520 12.8 13.2 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 3.937 2.31 E N.C 58.72 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 N.C 11.9 12.4 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 0.606 N.C 12.01 15.4
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/05
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